Stress-free path to stress-free metallic films paves the way for next-gen circuitry

Researchers from Tokyo Metropolitan University have used high power impulse magnetron scattering (HiPIMS) to create thin films of tungsten with unprecedentedly low levels of film stress. By optimizing the timing of a ‘substrate bias pulse’ with microsecond precision, they minimized impurities and defects to form crystalline films with stresses as low as 0.03 GPa, similar to those achieved through annealing. Their work promises efficient pathways for creating metallic films for the electronics industry.
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